Nove primene procesa nagrizanja silicijuma u vodenom rastvoru TMAH u izradi MEMS senzora
New applications of silicon wet etching using tmah water solution for fabrication of mems sensors.
Author
Smiljanić, Milče
Mentor
Jakšić, Zoran
Committee members
Tadić, MilanMihailović, Peđa

Jović, Vesna

Petričević, Slobodan

Metadata
Show full item recordAbstract
U ovom radu prikazani su razvoj i usavršavanje tehnološkog procesa vlažnog
anizotropnog hemijskog nagrizanja silicijuma orijentacije (100) u vodenom rastvoru
tetrametil-amonijum hidroksida (TMAH) koncentracije 25 tež. % na temperaturi od 800
C.
Razvoj maskless tehnike nagrizanja silicijuma u vodenom rastvoru TMAH je odredio
kristalografske ravni koje se pojavljuju tokom ove vrste nagrizanja. Preostale
kristalografske ravni su određene dodatnim nagrizanjem silicijumskih struktura definisanih
kvadratnim likovima sa stranicama projektovanim u različitim kristalografskim pravcima.
Određene su brzine nagrizanja uočenih kristalografskih ravni merenjem odgovarajućih
parametara. Na osnovu brzina nagrizanja i pojavljivanja i nestajanja uočenih
kristalografskih ravni tokom nagrizanja objašnjen je mehanizam nagrizanja u vodenom
rastvoru TMAH koncentracije 25 tež. % na temperaturi od 800
C. Mehanizam anizotropnog
nagrizanja silicijuma u vodenom rastvoru TMAH definisao je ograničenja tehnološkog
pr...ocesa. Razvijene su tehnike kompenzacije konveksnih i konkavnih uglova i tehnika
maskless nagrizanja čiji je cilj prevazilaženje uočenih ograničenja. Prikazane su primene
osvojenih tehnika nagrizanja u vodenom rastvoru TMAH u izradi različitih
trodimenzionalnih silicijumskih struktura, u izradi novih MEMS senzora i poboljšavanju
postojećih senzorskih struktura
This dissertation presents the development and improvement of the technological
process of wet anisotropic chemical etching in a 25 wt % TMAH water solution at а
temperature of 800
C of a (100) silicon substrate. The development of a maskless etching
technique in TMAH water solution has determined all the silicon crystallographic planes
that appeared during this type of etching. The remaining crystallographic planes were
determined by additional etching of silicon structures that had been defined by square
islands with the sides designed along various crystallographic directions. The etch rates of
all exposed planes have been calculated by measuring the time dependence of the
appropriate parameters. Various silicon crystallographic planes have different etch rates
and some planes disappear while others appear during etching. Based on these facts, a
mechanism of wet silicon etching in 25 wt % TMAH water solution at a temperature of
800
C is explained. The mechanism of anisotropic etchin...g in TMAH water solution has
determined the limitations of this technological process. Convex corner compensation,
concave corner compensation and maskless techniques were developed to overcome the
observed limitations. As examples of the developed techniques in TMAH water solution,
various 3D silicon structures, new and improved MEMS sensors structures have been
fabricated.
Faculty:
Универзитет у Београду, Електротехнички факултетDate:
24-10-2013Projects:
- Micro- Nanosystems and Sensors for Electric Power and Process Industry and Environmental Protection (RS-32008)