Uticaj suksesivnog ozračivanja fotonaponskih detektora gama i neutronskim zračenjem na njihove karakteristike

Abstract

Oblast nauke i tehnike koja se bavi fotonaponskim poluprovodničkim detektorima je oblast koja je doživela izuzetno brz razvoj u poslednjih 20 godina. Razlog tome jesu, s jedne strane praktično neograničene mogućnosti primene ovih detektora (optički komunikacioni sistemi, medicinski uređaji, vojni uređaji, automatski upravljački sistemi, razni elektronski uređaji za široku upotrebu), a sa druge strane minijaturizacija elektronskih komponenti i usavršavanje serijske proizvodnje ovih uređaja što je omogućilo da im cena bude relativno niska i da budu dostupni širokoj populaciji. Posebno interesantne primene poluprovodničkih fotonaponskih detektora jesu u vojnim sistemima, u medicinskim aparatima i uređajima i kosmičkim sistemima. Ovo su oblasti primene gde je verovatnoća da se fotonaponski detektori nađu u polju povećane radijacije jako velika. Oblast fotonaponskih detektora i vrsta zračenja kojima oni mogu biti izloženi je jako velika. Ovaj rad se ograničio na posmatranje fotodioda, fototranzistora i solarnih ćelija i njihovo ponašanje u uslovima gama i neutronskog zračenja s obzirom da prilikom čestične emisije iz jezgra, po pravilu, dolazi i do istovremene deeksitacije jezgra potomka emisijom diskretnog gama zračenja. Poluprovodničke komponente, stoga, bivaju izložene superponirajućem dejstvu neutronskog i gama zračenja. Cilj rada jeste istraživanje uticaja pojačanog gama i neutronskog zračenja na PIN fotodiode, fototranzistore i solarne ćelije i na njihove izlazne karakteristike. Posebna pažnja je poklonjena sukcesivnom delovanju gama i neutronskog zračenja i to u dva slučaja. U prvom kada se komponente nalaze u polju gama zračenja a nakon toga u polju neutronskog zračenja, i u drugom kada je neutronsko ozračivanje prvo a gama drugo. Tokom posmatranja uticaja ove dve vrste zračenja na fotodetektore pre i nakon svakog pojedinačnog koraka ozračivanja, snimane su izlazne karakteristike, i to:...

Science and technology that deals with photovoltaic semiconductor detectors is an area with an extremely rapid development in the last 20 years. The reason for this are, on the one hand, practically countless possibilities of application of these detectors(optical communication systems, medical devices, military equipment, automatic control systems, various electronic devices), and, on the other hand, miniaturization of electronic components and development of these devices mass production allowed them to have relatively low cost and to be accessible to the wide population. Particularly interesting applications of semiconductor photovoltaic detectors are in military systems, medical devices and equipment and cosmic systems. These are areas where the probability for photovoltaic detectors to be in increased radiation field is very large. The area of photovoltaic detectors and radiation type which they can be exposed is very large. This work is limited to the observation of the photodiodes, phototransistors and solar cells and their behavior in terms of gamma and neutron radiation considering that with particle emission from the core, as a rule, there have been a simultaneous deexcitations descendant core by a discrete gamma-ray emission. Semiconductor devices, therefore, are exposed to summary effect of neutron and gamma radiation. The aim of this paper is to explore the impact of increased gamma and neutron radiation on the PIN photodiodes, phototransistors and solar cells and their output characteristics. Special attention was paid to the successive impact of gamma and neutron radiation in two cases. One, when the components are in the field of gamma radiation and after that in the field of neutron radiation, and two, when neutron irradiation is the first and gamma is the second. During the observation of effects of these two types of radiation on the photodetectors, before and after each step of irradiation, output characteristics have been measured, namely: current-voltage characteristics and spectral response of PIN photodiodes and phototransistors and current-voltage characteristics, serial and parallel...