oxide at the cathode and increased effective surface area. A new methods for determination of the formative time delay, electron attachment coefficient and the drift velocity of the dominant ions are proposed. The memory curve at low pressure is analyzed and three distinctive regions are observed. The first regions is explained by the diffusion losses of the dominant ions. By applying the analytical model the diffusion coefficients of the dominant ions are determined. The two-dimensional numerical model for early and late relaxation is developed. The onedimensional model is used to calculate stationary glow number densities of ions which are used as initial number densities for modelling the relaxation. The results of numerical model indicate that the dominant ion in the early relaxation is oxygen O+2 ions due to intensive N+2 ion conversion. Late relaxationis explained by the surface recombination of nitrogen atoms on borosilicate glass and stainless-steel electrodes. From the numerical model the coefficients of nitrogen atom surface recombination are determined.